AEC-Q101對(duì)對(duì)各類(lèi)半導(dǎo)體分立器件的車(chē)用可靠性要求進(jìn)行了梳理。AEC-Q101試驗(yàn)不僅是對(duì)元器件可靠性的國(guó)際通用報(bào)告,更是打開(kāi)車(chē)載供應(yīng)鏈的敲門(mén)磚。 百檢檢測(cè)在SiC第三代半導(dǎo)體器件的AEC-Q認(rèn)證上具有豐富的實(shí)戰(zhàn)經(jīng)驗(yàn),為您提供專(zhuān)業(yè)可靠的AEC-Q101認(rèn)證服務(wù),同時(shí),我們也開(kāi)展了間歇工作壽命(IOL)、HAST、H3TRB、HTRB、HTGB、高壓蒸煮(Autoclave)試驗(yàn)服務(wù),設(shè)備能力完全覆蓋以SiC為第三代半導(dǎo)體器件的可靠性試驗(yàn)?zāi)芰Α?/span>
服務(wù)介紹
隨著技術(shù)的進(jìn)步,各類(lèi)半導(dǎo)體功率器件開(kāi)始由實(shí)驗(yàn)室階段走向商業(yè)應(yīng)用,尤其以SiC為代表的第三代半導(dǎo)體器件國(guó)產(chǎn)化的腳步加快。但車(chē)用分立器件市場(chǎng)均被國(guó)外巨頭所把控,國(guó)產(chǎn)器件很難分一杯羹,主要的原因之一即是可靠性得不到認(rèn)可。
測(cè)試周期:
2-3個(gè)月,提供全面的認(rèn)證計(jì)劃、測(cè)試等服務(wù)
產(chǎn)品范圍:
二、三極管、晶體管、MOS、IBGT、TVS管、Zener、閘流管等半導(dǎo)體分立器件
測(cè)試項(xiàng)目:
序號(hào) | 測(cè)試項(xiàng)目 | 縮寫(xiě) | 樣品數(shù)/批 | 批數(shù) | 測(cè)試方法 |
1 | Pre- and Post-Stress Electrical and Photometric Test | TEST | 所有應(yīng)力試驗(yàn)前后均進(jìn)行測(cè)試 | 用戶(hù)規(guī)范或供應(yīng)商的標(biāo)準(zhǔn)規(guī)范 | |
2 | Pre-conditioning | PC | SMD產(chǎn)品在7、8、9和10試驗(yàn)前預(yù)處理 | JESD22-A113 | |
3 | External Visual | EV | 每項(xiàng)試驗(yàn)前后均進(jìn)行測(cè)試 | JESD22-B101 | |
4 | Parametric Verification | PV | 25 | 3 Note A | 用戶(hù)規(guī)范 |
5 | High Temperature Reverse Bias | HTRB | 77 | 3 Note B | MIL-STD-750-1 M1038 Method A |
5a | AC blocking voltage | ACBV | 77 | 3 Note B | MIL-STD-750-1 M1040 Test Condition A |
5b | High Temperature Forward Bias | HTFB | 77 | 3 Note B | JESD22 A-108 |
5c | Steady State Operational | SSOP | 77 | 3 Note B | MIL-STD-750-1 M1038 Condition B(Zeners) |
6 | High Temperature Gate Bias | HTGB | 77 | 3 Note B | JESD22 A-108 |
7 | Temperature Cycling | TC | 77 | 3 Note B | JESD22 A-104 Appendix 6 |
7a | Temperature Cycling Hot Test | TCHT | 77 | 3 Note B | JESD22 A-104 Appendix 6 |
7a alt | TC Delamination Test | TCDT | 77 | 3 Note B | JESD22 A-104 Appendix 6 J-STD-035 |
7b | Wire Bond Integrity | WBI | 5 | 3 Note B | MIL-STD-750 Method 2037 |
8 | Unbiased Highly Accelerated Stress Test | UHAST | 77 | 3 Note B | JESD22 A-118 |
8 alt | Autoclave | AC | 77 | 3 Note B | JESD22 A-102 |
9 | Highly Accelerated Stress Test | HAST | 77 | 3 Note B | JESD22 A-110 |
9 alt | High Humidity High Temp. Reverse Bias | H3TRB | 77 | 3 Note B | JESD22 A-101 |
10 | Intermittent Operational Life | IOL | 77 | 3 Note B | MIL-STD-750 Method 1037 |
10 alt | Power and Temperature Cycle | PTC | 77 | 3 Note B | JESD22 A-105 |
11 | ESD Characterization | ESD | 30 HBM | 1 | AEC-Q101-001 |
30 CDM | 1 | AEC-Q101-005 | |||
12 | Destructive Physical Analysis | DPA | 2 | 1 NoteB | AEC-Q101-004 Section 4 |
13 | Physical Dimension | PD | 30 | 1 | JESD22 B-100 |
14 | Terminal Strength | TS | 30 | 1 | MIL-STD-750 Method 2036 |
15 | Resistance to Solvents | RTS | 30 | 1 | JESD22 B-107 |
16 | Constant Acceleration | CA | 30 | 1 | MIL-STD-750 Method 2006 |
17 | Vibration Variable Frequency | VVF | 項(xiàng)目16至19是密封包裝的順序測(cè)試。 (請(qǐng)參閱圖例頁(yè)面上的注釋H.) | JEDEC JESD22-B103 | |
18 | Mechanical Shock | MS | JEDEC JESD22-B104 | ||
19 | Hermeticity | HER | JESD22-A109 | ||
20 | Resistance to Solder Heat | RSH | 30 | 1 | JESD22 A-111 (SMD) B-106 (PTH) |
21 | Solderability | SD | 10 | 1 Note B | J-STD-002 JESD22B102 |
22 | Thermal Resistance | TR | 10 | 1 | JESD24-3,24-4,26-6視情況而定 |
23 | Wire Bond Strength | WBS | 最少5個(gè)器件的10條焊線(xiàn) | 1 | MIL-STD-750 Method 2037 |
24 | Bond Shear | BS | 最少5個(gè)器件的10條焊線(xiàn) | 1 | AEC-Q101-003 |
25 | Die Shear | DS | 5 | 1 | MIL-STD-750 |
Method 2017 | |||||
26 | Unclamped Inductive Switching | UIS | 5 | 1 | AEC-Q101-004 Section 2 |
27 | Dielectric Integrity | DI | 5 | 1 | AEC-Q101-004 Section 3 |
28 | Short Circuit Reliability Characterization | SCR | 10 | 3 Note B | AEC-Q101-006 |
29 | Lead Free | LF | AEC-Q005 |